參數(shù)資料
型號: P0640EARP1
英文描述: 18LD 4MHZ 1K EPRM/128 EEPROM, 0C to +70C, 18-SOIC 300mil, TUBE
中文描述: SIDAC的| 77V V(下公報)最大| 800mA的我(縣)|對92VAR
文件頁數(shù): 120/161頁
文件大小: 986K
代理商: P0640EARP1
Construction and Operation
SIDACtor
Data Book
5 - 4
Teccor Electronics
(972) 580-7777
amounts of current because of the low voltage drop (V
T
) across the device. Once the
current flowing through the device is either interrupted or falls below a minimum
holding current (I
H
), the SIDACtor resets, returning to its off-state.
Physics
The SIDACtor is a semiconductor device which is characterized as having four layers
of alternating conductivity; PNPN. The four layers include an emitter layer, an upper
base layer, a mid-region layer and a lower base layer. The emitter is sometimes
referred to as a cathode region, with the lower base layer being referred to as an
anode region.
As the voltage across the SIDACtor increases and exceeds the devices V
DRM
, the
electric field across the center junction reaches a value sufficient to cause avalanche
multiplication. As avalanche multiplication occurs, the impedance of the device begins
to decrease and current flow begins to increase until the SIDACtor
s current gain
exceeds unity. Once unity is exceeded, the SIDACtor switches from a high impedance
(measured at V
S
) to a low impedance (measured at V
T
) until the current flowing
through the device is reduced below it
s holding current (I
H
).
Figure 5-2 Geometric Structure of Bidirectional SIDACtors
P
N
N
N
P
相關(guān)PDF資料
PDF描述
P0640EARP2 18LD 4MHZ 1K EPRM/128 EEPROM, -40C to +125C, 18-PDIP, TUBE
P0640EB 18LD 4MHZ 1K EPRM/128 EEPROM, -40C to +85C, 18-PDIP, TUBE
P0640EBRP1 20LD 4MHZ 1K EPRM/128 EEPROM, -40C to +85C, 20-SSOP 208mil, TUBE
P0640EBRP2 18LD 20MHZ 1K EPRM/128 EEPROM, 0C to +70C, 18-SOIC 300mil, TUBE
P0640EC 18LD 20MHZ 1K EPRM/128 EEPROM, -40C to +85C, 18-PDIP, TUBE
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