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參數(shù)資料
| 型號： | P06B03LV |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙P溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 363K |
| 代理商： | P06B03LV |
Dual P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P06B03LV
SOP-8
NIKO-SEM
2
MAY-19-2003
DYNAMIC
Input Capacitance
C
iss
530
Output Capacitance
C
oss
135
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= -15V, f = 1MHz
70
pF
Total Gate Charge
2
Q
g
10
14
Gate-Source Charge
2
Q
gs
2.2
Gate-Drain Charge
2
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -6A
2
nC
Turn-On Delay Time
2
t
d(on)
5.7
Rise Time
2
t
r
V
DS
= -15V, R
L
= 1
Ω
10
Turn-Off Delay Time
2
t
d(off)
I
D
-1A, V
GS
= -10V, R
GS
= 6
Ω
18
Fall Time
2
t
f
5
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
Continuous Current
I
S
-2.1
Pulsed Current
3
I
SM
-4
A
Forward Voltage
1
V
SD
I
F
= -1A, V
GS
= 0V
-1.2
V
Reverse Recovery Time
t
rr
I
F
= -5A, dl
F
/dt = 100A /
μ
S
15.5
nS
Reverse Recovery Charge
Q
rr
7.9
nC
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2
％
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P06B03LV”, DATE CODE or LOT #
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