參數(shù)資料
型號： P0720EARP2
英文描述： 18LD 20MHZ 2K EPRM/128 EEPROM, -40C to +85C, 18-SOIC 300mil, T/R
中文描述： SIDAC的| 88V V（下公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 119/161頁
文件大?。?/td> 986K
代理商： P0720EARP2
SIDACtor
Data Book
Construction and Operation
Teccor Electronics
(972) 580-7777
5 - 3
T
Overview
SIDACtors are thyristor devices used to protect sensitive circuits from electrical
disturbances caused by lightning and AC power cross conditions. The unique structure
and characteristics of the thyristor are used to create an over-voltage protection device
with precise and repeatable turn-on characteristics with low voltage overshoot and
high surge current capabilities.
Key Parameters
Key parameters for SIDACtors are V
DRM
, I
DRM
, V
S
, I
H
, and V
T
. V
DRM
is the repetitive
peak off-state voltage rating of the device (also know as stand-off voltage) and is the
continuous peak combination of AC and DC voltage that may be applied to the
SIDACtor in its off-state condition. I
DRM
is the maximum value of leakage current that
results from the application of V
DRM
. Switching voltage (V
S
) is the maximum voltage
that subsequent components may be subjected to during a fast rising (100V/μs) over-
voltage condition. Holding current (I
H
) is the minimum current required to maintain the
device in the on-state. And on-state voltage (V
T
) is the maximum voltage across the
device during full conduction.
Figure 5-1 V-I Characteristics
Operation
The SIDACtor operates much like a switch. In the off-state, the device exhibits leakage
currents (I
DRM
) less than 5μA making it invisible to the circuit it is protecting. As a
transient voltage exceeds the SIDACtors V
DRM
, the device will begin to enter its
protective mode with characteristics similar to an avalanche diode. When supplied with
enough current (I
S
), the SIDACtor will switch to an on-state, shunting the surge from
the circuit it is protecting. While in the on-state, the SIDACtor is able to sink large
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
相關(guān)PDF資料
PDF描述
P0720EB MCU CMOS 18LD 2K EPRM/128 EEPROM, 0C to +70C, 18-PDIP, TUBE
P0720EBRP1 MCU CMOS 18LD 2K EPRM/128 EEPROM, -40C to +85C, 18-PDIP, TUBE
P0900EA 14 PIN, 1.5KB STD FLASH, 67 RAM, 12 I/O, PB FREE, -40C to +85C, 14-SOIC 150mil, T/R
P0900EARP1 SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
P0900EARP2 SIDAC|98V V(BO) MAX|800MA I(S)|TO-92VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P0720EB 功能描述:硅對稱二端開關(guān)元件 100A 65V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0720EBL 功能描述:硅對稱二端開關(guān)元件 100A 65V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0720EBLAP 功能描述:硅對稱二端開關(guān)元件 100A 65V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0720EBLRP1 功能描述:硅對稱二端開關(guān)元件 100A 65V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P0720EBLRP2 功能描述:硅對稱二端開關(guān)元件 100A 65V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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