參數(shù)資料
型號： P0808ATG
廠商： Electronic Theatre Controls, Inc.
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù)： 2/5頁
文件大小： 102K
代理商： P0808ATG
2
Sep-20-2006
N-Channel Enhancement Mode Field
Effect Transistor
P0808ATG
TO-220
Lead Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
80
A
Drain-Source On-State
Resistance
1
Forward Transconductance
1
R
DS(ON)
V
GS
= 10V, I
D
= 80A
6.5
8
m
Ω
g
fs
V
DS
= 50V, I
D
= 80A
50
S
DYNAMIC
Input Capacitance
C
iss
4645
Output Capacitance
C
oss
780
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
C
rss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
115
pF
Q
g
195
Q
gs
42
Q
gd
V
DS
=60V, V
GS
= 10V,
I
D
= 80A
67
nC
t
d(on)
18
t
r
V
DD
= 40V,
150
t
d(off)
I
D
40A, V
GS
= 10V, R
GS
= 2.5
Ω
70
Fall Time
2
t
f
125
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
I
S
80
I
SM
250
A
V
SD
I
F
= 40A, V
GS
= 0V
1.3
V
Reverse Recovery Time
t
rr
120
nS
Peak Reverse Recovery Current
I
RM(REC)
I
F
= I
S
, dl
F
/dt = 100A /
μ
S
200
A
Reverse Recovery Charge
Q
rr
410
nC
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2
％
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P0808ATG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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