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參數(shù)資料
| 型號(hào)： | P0903BI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | P0903BI |
2
Mar-07-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
50
A
V
GS
= 4.5V, I
D
= 20A
11
16
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 25A
7.5
9.5
m
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 25A
32
S
DYNAMIC
Input Capacitance
C
iss
1200 1800
Output Capacitance
C
oss
600
1000
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
350
500
pF
Total Gate Charge
2
Q
g
25
50
Gate-Source Charge
2
Q
gs
15
Gate-Drain Charge
2
Q
gd
V
DS
= 10V, V
GS
= 10V,
I
D
= 25A
10
nC
Turn-On Delay Time
2
t
d(on)
6
16
Rise Time
2
t
r
V
DS
= 15V, R
L
= 1
120
250
Turn-Off Delay Time
2
t
d(off)
I
D
50A, V
GS
= 10V, R
GEN
= 24
40
90
Fall Time
2
t
f
105
200
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
I
S
50
Pulsed Current
3
I
SM
150
A
Forward Voltage
1
V
SD
I
S
= 25A, V
GS
= 0V
0.9
1.3
V
Reverse Recovery Time
t
rr
70
nS
Peak Reverse Recovery Current
I
RM(REC)
I
F
= I
S
, dl
F
/dt = 100A /
μ
S
200
A
Reverse Recovery Charge
Q
rr
0.043
μ
C
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P0903BI”, DATE CODE or LOT #
.
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