參數(shù)資料
型號： P1100EA
英文描述： 20LD 20MHZ 2K FLASH, 0C to +70C, 20-SSOP 208mil, T/R
中文描述： SIDAC的| 130V五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 69/161頁
文件大小： 986K
代理商： P1100EA
SIDACtor
Data Book
Secondary Protection
Teccor Electronics
(972) 580-7777
3 - 29
R
$
Secondary Protectors
Secondary protectors are adjunct devices (they can be either stand alone units or
integrated into strip protectors and UPS
’
) used to enhance the protection level of
customer premise equipment (CPE). Due to the inadequate level of protection being
designed into CPE, secondary protectors are often required to help prevent premature
failure of equipment that is exposed to environmental hazards (Figure 3-31).
Protection Requirements
Secondary protectors should be able to withstand over-voltages that can exceed 800V
and surge currents of up to 100A. In Figure 3-32, the SIDACtor was chosen because
the associated peak pulse current (I
PP
) is great enough to withstand the lightning
immunity tests of FCC Part 68 without the additional use of series line impedance.
Likewise, the fuse in Figure 3-32 was chosen because the amps
2
time (I
2
t) rating is
large enough to withstand the lightning immunity tests of FCC Part 68, but small
enough to pass UL power cross conditions.
Applicable Regulatory Requirements
UL 497A
Secondary Protection Reference Circuit
Figure 3-32 is an example of an interface design for a secondary protector. The
P3203AB SIDACtor is used because the peak off-state voltage (V
DRM
) is greater than
the potential of a Type B ringer signal superimposed on the POTS (plain old telephone
service) battery.
150V
RMS
√
2 + 56.6Vpk = 268.8Vpk
Coordination between the station protector and the secondary protector occurs due to
the line impedance between the two devices (Figure 3-31). The line impedance helps
ensure that the primary protector will begin to conduct while the secondary protector
limits any of the let through voltage to within the V
S
rating of the SIDACtor.
相關(guān)PDF資料
PDF描述
P1100EARP1 20LD 20MHZ 2K FLASH, -40C to +85C, 20-SSOP 208mil, T/R
P1100EARP2 MCU CMOS 18LD 2K FLASH, 0C to +70C, 18-SOIC 300mil, TUBE
P1100EB MCU CMOS 18LD 2K FLASH, -40C to +85C, 18-PDIP, TUBE
P1100EBRP1 MCU CMOS 18LD 2K FLASH, -40C to +85C, 20-SSOP 208mil, TUBE
P1300EARP2 SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P1100EA_ 功能描述:硅對稱二端開關(guān)元件 - RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100EAL 功能描述:硅對稱二端開關(guān)元件 50A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100EALAP 功能描述:硅對稱二端開關(guān)元件 50A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100EALRP1 功能描述:硅對稱二端開關(guān)元件 50A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P1100EALRP2 功能描述:硅對稱二端開關(guān)元件 50A 90V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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