參數(shù)資料
型號(hào): P1103BVG
廠商: Electronic Theatre Controls, Inc.
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 243K
代理商: P1103BVG
2
SEP-22-2004
N-Channel Enhancement Mode Field
Effect Transistor
P1103BVG
SOP-8
Lead-Free
NIKO-SEM
DYNAMIC
Input Capacitance
C
iss
1800
Output Capacitance
C
oss
720
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
15
pF
Q
g
17
26
Q
gs
3.4
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 10A
5.1
nC
t
d(on)
8.6
t
r
V
DS
= 15V , R
L
= 25
21
Turn-Off Delay Time
2
t
d(off)
I
D
1A, V
GS
= 10V, R
GEN
= 6
43
Fall Time
2
t
f
10
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
I
S
2.5
I
SM
5
A
V
SD
I
F
= 1A, V
GS
= 0V
1.1
V
Reverse Recovery Time
t
rr
I
F
= 2.3A, dl
F
/dt = 100A /
μ
S
50
80
nS
1
Pulse test : Pulse Width
300
μ
sec, Duty Cycle
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P1103BVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
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