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參數(shù)資料
| 型號(hào)： | P11C68-CGDPBS |
| 廠商： | Zarlink Semiconductor Inc. |
| 英文描述： | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| 中文描述： | 的CMOS / SNOS非易失性SRAM的高性能8畝× 8非易失性靜態(tài)RAM的 |
| 文件頁(yè)數(shù)： | 10/17頁(yè) |
| 文件大小： | 162K |
| 代理商： | P11C68-CGDPBS |
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P10C68/P11C68
10
Standard
t
NLQX
t
NLNH
t
GLNL
t
WHNL
t
ELNL
t
NLQZ
Alternative
t
RECALL
t
RC
Parameter
Recall cycle time
Recall initiation cycle time
Output enable set-up
Write enable set-up
Chip enable set-up
NE (bar) fall to output inactive
Units
μ
s
μ
s
ns
ns
ns
ns
Notes
19
20
Symbol
Min.
25
0
0
0
Max.
20
25
Min.
25
0
0
0
Max.
20
25
P10C68-45
P10C68-35
P10C68 RECALL CYCLE 1 : NE (BAR) CONTROLLED
(See note 16)
P10C68 RECALL CYCLE 3 : G (BAR) CONTROLLED
(See note 16)
Alternative
t
RECALL
t
RC
Parameter
Recall cycle time
Recall initiation cycle time
NE (bar) set-up
Write enable set-up
Chip enable set-up
Units
μ
s
ns
ns
ns
ns
Notes
19
20
Symbol
Min.
25
0
0
0
Max.
20
Min.
25
0
0
0
Max.
20
P10C68-45
P10C68-35
Standard
t
GLQX2
t
GLNH
t
NLGL
t
WHGL
t
ELGL
NOTES
19.
Measured with W (bar) and NE (bar) both returned high, and G (bar) returned low. Address transitions may not occur on
any address pin during this time.
Once t
RC
has been satisfied by NE (bar), G (bar), W (bar) and E (bar) the RECALL cycle is completed automatically. Any
of NE (bar), G (bar) or E (bar) may be used to terminate the RECALL initiation cycle.
20.
P10C68 RECALL CYCLE 2 : E (BAR) CONTROLLED
(See note 16)
Alternative
t
RECALL
t
RC
Parameter
Recall cycle time
Recall initiation cycle time
NE (bar) set-up
Output enable set-up
Write enable set-up
Units
μ
s
ns
ns
ns
ns
Notes
19
20
Symbol
Min.
25
0
0
0
Max.
20
Min.
25
0
0
0
Max.
20
P10C68-45
P10C68-35
Standard
t
ELQX2
t
ELNH
t
NLEL
t
GLEL
t
WHEL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P11C68-DCBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-DPBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IG | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IGDCBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IGDPBS | CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P11C68-DCBS | 制造商:ZARLINK 制造商全稱(chēng):Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-DPBS | 制造商:ZARLINK 制造商全稱(chēng):Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IG | 制造商:ZARLINK 制造商全稱(chēng):Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IGDCBS | 制造商:ZARLINK 制造商全稱(chēng):Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
| P11C68-IGDPBS | 制造商:ZARLINK 制造商全稱(chēng):Zarlink Semiconductor Inc 功能描述:CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM |
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