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| 型號(hào)： | P122 |
| 廠商： | International Rectifier |
| 英文描述： | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
| 中文描述： | 鈍化組裝的電路元件 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | P122 |
P100 Series
6
Bulletin I27125 rev. A 04/99
www.irf.com
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
150
200
250
300
350
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
P100 Series
Per J unction
At Any Rated Loa d Condition And With
Ra ted V Applied Following Surge.
Initial T = 125
°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100
150
200
250
300
350
400
0.01
0.1
1
Pulse Train Duration (s)
P
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Dura tion. Control
Of C onduction May Not Be Mainta ined.
Initial T = 125
°C
No Voltag e Reapplied
Rated V Reapplied
P100 Series
Per Junction
0.01
0.0001
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Steady State Value:
R = 2.24K/W
(DC Operation)
P100 Series
Per Junction
t
T
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
a)Recommended load line for
rated di/dt : 10V, 20 ohms, tr <= 1μs
(4)
(3)
(2)
(1)
Instantaneous Gate C urrent (A)
I
Frequency Limited
By PG(AV)
T
°
T
T
b)Recommended load line for
rated di/dt : 10 V, 65 ohms, tr <= 1μs
(1) PGM = 100 W, tp = 500
μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
IGD
P100 Series
VG D
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