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參數(shù)資料
| 型號： | P12NB30FP |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 中文描述： | ? -通道增強型MOSFET的PowerMESH |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | P12NB30FP |
STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.34
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY(UPS)
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
January 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP12NB30
STP12NB30FP
300
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
300
±
30
V
V
12
7.5
6.5
4
A
A
48
48
A
125
1
35
0.28
W
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
5.5
V/ns
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
TYPE
V
DSS
R
DS(on)
< 0.40
< 0.40
I
D
STP3NB60
STP12NB30FP
300 V
300 V
12A
6.5 A
1/6
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相關代理商/技術參數(shù) |
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