參數(shù)資料
型號： P1300EARP2
英文描述： SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
中文描述： SIDAC的| 160V五（公報）最大| 800mA的我（縣）|對92VAR
文件頁數(shù)： 131/161頁
文件大小： 986K
代理商： P1300EARP2
SIDACtor
Data Book
PCB Layout
Teccor Electronics
(972) 580-7777
5 - 15
T
greater than one-fourth of a wavelength.
Finally, because traces exhibit a certain level of inductance, the length of the ground
trace on the PCB should be kept as short as possible in order to minimize its voltage
contribution during a transient condition. In order to determine the actual voltage
contributed to trace inductance, use the following equations:
1. V=L (dI/dt)
2. L=0.0051
ρ
[log
e
2
ρ
/(t+w) +
- log
e
G] in μH
ρ
= length of trace
G = is a function thickness and width as is given below
t
= trace thickness
w = trace width
As an example, assume circuit A is protected by a P3100SC with a V
S
equal to 300V
and a ground trace one inch in length and a self-inductance equal to 2.4μH/inch.
Assume circuit B has the identical characteristics as the first, except the ground trace
is 5 inches in length instead of 1 inch in length. If both circuits are surged with a 100A,
10x1000μs wave-form, the results would be as follows:
Other practices to ensure sound grounding techniques are:
1. Always cross signal grounds and earth grounds perpendicularly in order to
minimize the field effects of
“
noisy
”
power supplies.
2. Always make sure that the ground fingers on any edge connector extend farther out than
any power or signal leads in order to guarantee that the ground connection is invariably
connected first.
Values Of Constants For The Geometric Mean Distance Of A Rectangle
Notes: Sides of the rectangle are t and w. The geometric mean distance R is given by:
log
e
R = log
e
(t+w)-1.5+log
e
G. R=K(t+w), log
e
K = -1.5+log
e
G.
V
L
= L (di/dt)
SIDACtor V
S
Total protection level
(V
L
+ V
S
)
Circuit A
V
L
=2.4 μH (100A/10(s) =24V
V
L
=12 μH (100A/10(s) =120V
300V
324V
Circuit B
300V
420V
t/w or w/t
K
Log
e
G
t/w or w/t
K
Log
e
G
t/w or w/t
K
Log
e
G
.0
0.22313
.0
0.350
0.22366
0.00236
0.70
0.22355
0.00187
0.025
0.22333
0.00089
0.400
0.22364
0.00228
0.75
0.22354
0.00184
0.050
0.22346
0.00146
0.450
0.22362
0.00219
0.80
0.22353
0.00181
0.100
0.22360
0.00210
0.500
0.22360
0.00211
0.85
0.22353
0.00179
0.150
0.22366
0.00239
0.50
0.22360
0.00211
0.90
0.22353
0.00178
0.200
0.22369
0.00249
0.55
0.22358
0.00203
0.95
0.223525
0.00177
0.250
0.22369
0.00249
0.60
0.22357
0.00197
1.00
0.223525
0.00177
0.300
0.22368
0.00244
0.65
0.22356
0.00192
.0
.0
.0
相關(guān)PDF資料
PDF描述
P1300EB SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
P1300EBRP1 SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
P1300EBRP2 SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
P1300EC SIDAC|160V V(BO) MAX|800MA I(S)|TO-92VAR
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P1300EBL 功能描述:硅對稱二端開關(guān)元件 100A 120V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1300EBLAP 功能描述:硅對稱二端開關(guān)元件 100A 120V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1300EBLRP1 功能描述:硅對稱二端開關(guān)元件 100A 120V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1300EBLRP2 功能描述:硅對稱二端開關(guān)元件 100A 120V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
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