參數(shù)資料
型號: P1500SBRP
英文描述: MCU CMOS 18 LD 10MHZ .5K FLASH, -40C to +85C, 18-PDIP, TUBE
中文描述: SIDAC的| 180V五(公報(bào))最大| 800mA的我(縣)|的DO - 214AA
文件頁數(shù): 71/161頁
文件大?。?/td> 986K
代理商: P1500SBRP
SIDACtor
Data Book
Triac Protection
Teccor Electronics
(972) 580-7777
3 - 31
R
Thyristors
Damage can occur to a thyristor if the thyristor
s repetitive peak off-state voltage is
exceeded. A thyristor
s repetitive peak off-state voltage may be exceeded due to dirty
AC power mains, inductive spikes, motor latch up, etc.
Thyristor Reference Circuit
Figures 3-33 & 3-34 show two different methods of protecting a triac. In Figure 3-33, a
SIDACtor is connected from MT2 to the gate of the triac. When the voltage applied to
the triac exceeds the SIDACtor
s V
DRM
, the SIDACtor turns on, producing a gate
current which turns the triac on.
The circuit in Figure 3-34 places a SIDACtor across MT2 and MT1 of the triac. In this
instance the SIDACtor protects the triac by turning on and shunting the transient
before it exceeds the V
DRM
rating of the triac.
Regardless of the method chosen, when using a SIDACtor to protect a thyristor, the
following design considerations must be followed:
Figure 3-33 TRIAC Protection
Figure 3-34 TRIAC Protection
V
DRM
of the SIDACtor < V
DRM
of Triac
SIDACtor V
DRM
> 120% V
PK(power supply)
SIDACtor must be placed behind the load
MT2
Triac
To
Gating
Circuitry
Hot
Neutral
MT1
SIDACtor
Load
MT2
Triac
To
Gating
Circuitry
Hot
Neutral
MT1
SIDACtor
Load
相關(guān)PDF資料
PDF描述
P1500SCRP MCU CMOS 18 LD LOW PWR, 0C to +70C, 18-SOIC 300mil, TUBE
P1602ABRP MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-PDIP, TUBE
P1602AC MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-SOIC 300mil, TUBE
P1602ACRP MCU CMOS 18 LD LOW PWR, 0C to +70C, 18-SOIC 300mil, T/R
P1800SARP SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA
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