參數資料
型號： P1602ABRP
英文描述： MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-PDIP, TUBE
中文描述： SIDAC的| 95V V（下公報）最大| 800mA的我（縣）|對220VAR
文件頁數： 84/161頁
文件大?。?/td> 986K
代理商： P1602ABRP
GR 1089-Core
SIDACtor
Data Book
4 - 10
Teccor Electronics
(972) 580-7777
At no time will the short circuit exceed 1 ohm. For equipment with more than one
twisted pair, the short circuit will be applied to all twisted pair simultaneously. To
comply with the short circuit test, the EUT must function normally after the short-circuit
condition has been applied and a fire hazard may not be present.
Intra-Building Lightning and AC Power Fault Test
Not all equipment is intended to be off premise equipment nor is all equipment
intended to interface with the telephone outside plant. For such equipment, the EUT
need only meet the Intra-Building Lightning Surge Test found in Table 4-8 and the
Intra-Building AC Power Fault Test found in Table 4-9.
Table 4-8 Intra-Building Lightning Surge Test
Surge Current
per Conductor
(A)
Note:
The EUT shall not be damaged and shall continue to operate. Because the intensity of
the Intra-Building Tests are much less than those found in Table 4-2 through
Table 4-6, if the EUT only meets the criteria found in Table 4-8 and 4-9, documentation
must be included indicating that the equipment is solely intended for intra-building
(non-exposed wiring) connections.
Table 4-9 Second Level Intra-Building AC Power Fault Test
Short Circuit
Current per Line
Conductor
(A)
120
25
Note:
For EUT containing secondary voltage limiting and current limiting protectors, tests are
to be performed at the indicated voltage(s) and repeated at a reduced voltage and
current just below the operating threshold of the secondary protectors. This second
level test may be destructive but shall not become a fire, fragmentation or electrical fire
hazard.
Test
Surge
Voltage
(V
PK
)
± 800
Wave-form
Repetitions Each
Polarity
Test Connections
(Table 4-1, Fig. 4-1)
1
2x10μs
100
1
A
2
± 1500
2x10μs
100
1
B
Test
Applied
Voltage, 60Hz
(V
RMS
)
Duration
Primary
Protectors
Test Connections
(Table 4-1, Fig. 4-1)
1
15 minutes
Removed
A
相關PDF資料
PDF描述
P1602AC MCU CMOS 18 LD LOW PWR, -40C to +85C, 18-SOIC 300mil, TUBE
P1602ACRP MCU CMOS 18 LD LOW PWR, 0C to +70C, 18-SOIC 300mil, T/R
P1800SARP SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA
P1800SBRP SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA
P1800SCRP SIDAC|220V V(BO) MAX|800MA I(S)|DO-214AA
相關代理商/技術參數
參數描述
P1602ABTP 功能描述:硅對稱二端開關元件 100A 65/130V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1602AC 功能描述:硅對稱二端開關元件 500A 65/130V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1602AC MCL 功能描述:硅對稱二端開關元件 Modified TO-220 Two-Chip MicroCapacitance (MC) SIDACtor Device RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1602AC60 功能描述:硅對稱二端開關元件 500A 65/130V RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
P1602ACL 功能描述:硅對稱二端開關元件 65/130V 500A TO220A SIDACtor SYM 2Chp RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
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