參數(shù)資料
型號(hào): P2300EBRP1
英文描述: MCU CMOS 44 LD 25MHZ 4K EPRM, -40C to +85C, 44-TQFP, TRAY
中文描述: SIDAC的| 260伏特五(公報(bào))最大| 800mA的我(縣)|對(duì)92VAR
文件頁數(shù): 16/161頁
文件大小: 986K
代理商: P2300EBRP1
Electrical Parameters Defined
SIDACtor
Data Book
1 - 6
Teccor Electronics
(972) 580-7777
C
O
- Off-state Capacitance
Typical capacitance measured in off-state.
dI/dt - Rate of Rise of Current
Maximum rated value of the acceptable rate of rise in current over time.
dV/dt - Rate of Rise of Voltage
Rate of applied voltage over time.
I
S
- Switching Current
Maximum current required to switch to on-state.
I
DRM
- Leakage Current
Maximum peak off-state current measured at V
DRM.
I
H
- Holding Current
Minimum current required to maintain on-state.
I
PP
- Peak Pulse Current
Maximum rated peak impulse current.
I
T
- On-state Current
Maximum rated continuous on-state current.
I
TSM
- Peak One Cycle Surge Current
Maximum rated one cycle AC current.
V
S
- Switching Voltage
Maximum voltage prior to switching to on-state.
V
DRM
- Peak off-state Voltage
Maximum voltage that can be applied while maintaining off-state.
V
F
- On-state Forward Voltage
Maximum forward voltage measured at rated on-state current.
V
T
- On-state Voltage
Maximum voltage measured at rated on-state current.
NOTE:
On-state is defined as the low impedance condition reached during full
conduction. It is also referred to as the crowbar condition and simulates a short
circuit.
Off-state is defined as the high impedance condition prior to beginning
conduction. It is also referred to as the blocking condition and simulates an
open circuit.
相關(guān)PDF資料
PDF描述
P2300EBRP2 MCU CMOS 44 LD 33MHZ 4K EPRM, 0C to +70C, 44-MQFP, TRAY
P2300EC MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to +85C, 44-PLCC, TUBE
P2300ECRP1 MCU CMOS 44 LD 33MHZ 4K EPRM, -40C to +85C, 44-TQFP, TRAY
P2300ECRP2 MCU CMOS 44LD 16 MHz EPRM, -40C to +85C, 44-TQFP, T/R
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P2300EC 功能描述:硅對(duì)稱二端開關(guān)元件 500A 190V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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