參數(shù)資料
型號(hào)： P2600SCRP
英文描述： SIDAC|300V V(BO) MAX|800MA I(S)|DO-214AA
中文描述： SIDAC的| 300V五（公報(bào)）最大| 800mA的我（縣）|的DO - 214AA
文件頁數(shù)： 121/161頁
文件大小： 986K
代理商： P2600SCRP
SIDACtor
Data Book
SIDACtor Selection Criteria
Teccor Electronics
(972) 580-7777
5 - 5
T
$%$
When selecting a SIDACtor, the following criteria should be used:
Off-state Voltage (V
DRM
)
The V
DRM
of the SIDACtor must be greater than the maximum operating voltage of the
circuit that the SIDACtor is protecting.
Example 1: For a POTS (Plain Old Telephone Service) application, convert the maximum
operating ring voltage (150V
RMS
) to a peak voltage and add the maximum DC bias
of the central office battery:
150V
RMS
√
2 + 56.6V
PK
= 268.8V
PK
∴
V
DRM
>268.8V
Example 2: For an ISDN application, add the maximum voltage of the DC power supply to the
maximum voltage of the transmission signal:
150V
PK
+ 3V
PK
= 153V
PK
∴
V
DRM
>153V
Switching Voltage (V
S
)
The V
S
of the SIDACtor should be equal to or less than the instantaneous peak
voltage rating of the component it is protecting.
Example 1: V
S
≤
V
Relay Breakdown
Example 2: V
S
≤
SLIC V
PK
Peak Pulse Current (I
PP
)
For circuits that do not require additional series resistance, the surge current rating
(I
PP
) of the SIDACtor should be greater than or equal to the surge currents associated
with the lightning immunity tests of the applicable regulatory requirement (I
PK
).
I
PP
≥
I
PK
For circuits that utilize additional series resistance, the surge current rating (I
PP
) of the
SIDACtor should be greater than or equal to the
available
surge currents associated
with the lightning immunity tests of the applicable regulatory requirement (I
PK(available)
).
I
PP
≥
I
PK(available)
The maximum available surge current is calculated by dividing the peak surge voltage
(V
PK
) by the total circuit resistance (R
TOTAL
).
I
PK(available)
= V
PK
/R
TOTAL
For longitudinal surges (TIP-GND, RING-GND), R
TOTAL
is calculated for both TIP and
RING.
R
SOURCE
= V
PK
/I
PK
R
TOTAL
= R
TIP
+ R
SOURCE
R
TOTAL
= R
RING
+ R
SOURCE
相關(guān)PDF資料
PDF描述
P3000AA61RP MCU CMOS 44LD LOW PWR, -40C to +85C, 44-QFN, T/R
P3002AA SIDAC|180V V(BO) MAX|800MA I(S)|TO-220VAR
P3100EA SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
P3100EARP1 SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
P3100EARP2 SIDAC|350V V(BO) MAX|800MA I(S)|TO-92VAR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P2600SD 功能描述:硅對(duì)稱二端開關(guān)元件 P2600SD RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600SDL 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:gas plasma arresters-package dimensions/specifications
P2600SDLRP 功能描述:硅對(duì)稱二端開關(guān)元件 HIGH SURGE 220V 1000A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600SDRP 功能描述:硅對(duì)稱二端開關(guān)元件 1000A 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
P2600THLRP 功能描述:硅對(duì)稱二端開關(guān)元件 220V 35A DO41 SIDACtor Bi RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*