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參數(shù)資料
| 型號(hào)： | P2804HVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 309K |
| 代理商： | P2804HVG |
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
1
AUG-19-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
NIKO-SEM
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
7
Continuous Drain Current
T
C
= 70 °C
I
D
6
Pulsed Drain Current
1
I
DM
40
A
T
C
= 25 °C
2
Power Dissipation
T
C
= 70 °C
P
D
1.3
W
Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
j
, T
stg
-55 to 150
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
R
θ
JA
62.5
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
40
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
1.5
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
V
DS
= 32V, V
GS
= 0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
10
μ
A
G : GATE
D : DRAIN
S : SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
40
28m
7A
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