參數(shù)資料
型號: P2804NVG
廠商: Electronic Theatre Controls, Inc.
英文描述: N- & P-Channel Enhancement Mode Field Effect Transistor
中文描述:
文件頁數(shù): 2/8頁
文件大小: 528K
代理商: P2804NVG
2
AUG-19-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804NVG
SOP-8
Lead-Free
NIKO-SEM
V
DS
= 0V, V
GS
= ±20V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
N-Ch
P-Ch
±100
±100
nA
V
DS
= 32V, V
GS
= 0V
V
DS
= -32V, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V, V
GS
= 0V, T
J
= 55 °C
N-Ch
P-Ch
10
-10
μ
A
V
DS
= 5V, V
GS
= 10V
On-State Drain Current
1
I
D(ON)
V
DS
=-5V, V
GS
= -10V
N-Ch
P-Ch
20
-20
A
V
GS
= 4.5V, I
D
= 6A
V
GS
= -4.5V, I
D
= -4A
N-Ch
P-Ch
30
80
42
105
V
GS
= 10V, I
D
= 7A
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= -10V, I
D
= -5A
N-Ch
P-Ch
21
50
28
65
m
V
DS
= 10V, I
D
= 7A
Forward Transconductance
1
g
fs
V
DS
= -10V, I
D
= -5A
N-Ch
P-Ch
19
11
S
DYNAMIC
Input Capacitance
C
iss
N-Ch
P-Ch
790
690
Output Capacitance
C
oss
N-Ch
P-Ch
175
310
Reverse Transfer Capacitance
C
rss
N-Channel
V
GS
= 0V, V
DS
= 10V, f = 1MHz
P-Channel
V
GS
= 0V, V
DS
= -10V, f = 1MHz N-Ch
P-Ch
65
75
pF
Total Gate Charge
2
Q
g
N-Ch
P-Ch
16
14
Gate-Source Charge
2
Q
gs
N-Ch
P-Ch
2.5
2.2
Gate-Drain Charge
2
Q
gd
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 7A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -5A
N-Ch
P-Ch
2.1
1.9
nC
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