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參數(shù)資料
| 型號： | P28F010-90 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:22; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 |
| 封裝： | 0.620 X 1.640 INCH, PLASTIC, DIP-32 |
| 文件頁數(shù)： | 2/30頁 |
| 文件大?。?/td> | 405K |
| 代理商： | P28F010-90 |
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28F010
290207–1
Figure 1. 28F010 Block Diagram
Table 1. Pin Description
Symbol
Type
Name and Function
A
0
–A
16
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a write cycle.
DQ
0
–DQ
7
INPUT/OUTPUT
DATA INPUT/OUTPUT:
Inputs data during memory write cycles;
outputs data during memory read cycles. The data pins are active high
and float to tri-state OFF when the chip is deselected or the outputs
are disabled. Data is internally latched during a write cycle.
CE
Y
INPUT
CHIP ENABLE:
Activates the device’s control logic, input buffers,
decoders and sense amplifiers. CE
Y
is active low; CE
Y
high
deselects the memory device and reduces power consumption to
standby levels.
OE
Y
INPUT
OUTPUT ENABLE:
Gates the devices output through the data buffers
during a read cycle. OE
Y
is active low.
WE
Y
INPUT
WRITE ENABLE:
Controls writes to the control register and the array.
Write enable is active low. Addresses are latched on the falling edge
and data is latched on the rising edge of the WE
Y
pulse.
Note:
With V
PP
s
6.5V, memory contents cannot be altered.
V
PP
ERASE/PROGRAM POWER SUPPLY
for writing the command
register, erasing the entire array, or programming bytes in the array.
V
CC
DEVICE POWER SUPPLY
(5V
g
10%)
V
SS
GROUND
NC
NO INTERNAL CONNECTION
to device. Pin may be driven or left
floating.
2
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| P28F010-65 | 1024K (128K x 8) CMOS FLASH MEMORY |
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| P28F020-90 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P28F020120 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| P28F020-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| P28F020150 | 制造商:Intel 功能描述: |
| P28F020-150 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
| P28F02090 | 制造商:Intel 功能描述: |
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