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參數(shù)資料
| 型號： | P3207-05 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PbSe photoconductive detector |
| 中文描述： | 硒化鉛光電探測器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 174K |
| 代理商： | P3207-05 |
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
ELEMENT TEMPERATURE
(
C)
R
(Typ.)
10
1
10
2
10
3
0
20
10
40
50
30
60
-20
-10
DARK RESISTANCE
RISE TIME
ELEMENT TEMPERATURE
(
C)
R
(Typ.)
10
1
10
2
-20
10
3
-10
0
10
20
30
40
50
60
LIGHT SOURCE: BLACK BODY 500 K
SUPPLY VOLTAGE: 15 V
INCIDENT ENERGY: 16.7 μW/cm
2
CHOPPING FREQUENCY: 600 Hz
CHOPPING FREQUENCY (Hz)
R
S
(Typ. Ta=25
C)
10
1
10
2
10
3
10
2
10
3
10
4
S/N
S
N
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 μW/cm
SUPPLY VOLTAGE: 15 V
SUPPLY VOLTAGE
(V)
S
N
100
70
80
90
(Typ. Ta=25
C)
0
0
100
200
300
600
500
400
0
6
3
12
15
9
18
10
20
30
40
50
60
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 μW/cm
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
Supply voltage is the
value which contains
load resistance
N
S
I
Spectral response
I
S/N vs. supply voltage
I
S/N vs. chopping frequency
I
Photo sensitivity temperature characteristic
I
Dark resistance, rise time temperature characteristics
KIRDB0280EA
KIRDB0281EA
KIRDB0054EB
KIRDB0055EB
P791/P2038/P2680
series
P3207-05
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
KIRDB0052EC
KIRDB0053EB
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
WAVELENGTH
(μm)
(Typ.)
1
2
3
4
5
6
7
0
20
40
60
80
100
R
-20
C
-10
C
25
C
WAVELENGTH (
μ
m)
(Typ.)
1
2
3
4
5
6
7
0
20
40
60
80
100
R
2
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|---|---|
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| P320DB70RI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| P320DB70VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
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