參數資料
型號: P403W
廠商: International Rectifier
英文描述: MS3114P8-4P
中文描述: 鈍化組裝的電路元件
文件頁數: 3/7頁
文件大?。?/td> 90K
代理商: P403W
P400 Series
3
Bulletin I2776 rev. E 04/99
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current at V
RRM
, V
DRM
I
RRM
Max peak reverse leakage current
100
μA
T
J
= 25°C
50Hz, circuit to base, all terminal shorted,
T
J
= 25°C, t = 1s
Blocking
Parameter
P400
Units Conditions
200
V/μs
T
J
= 125°C, exponential to 0.67 V
DRM
gate open
10
mA
T
J
= 125°C, gate open circuit
V
INS
RMS isolation voltage
2500
V
P
GM
P
G(AV)
Maximum average gate power
I
GM
- V
GM
Maximum peak negative
gate voltage
Maximum peak gate power
8
2
Maximum peak gate current
2
A
V
GT
Maximum gate voltage required
3
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
2
Anode Supply = 6V resistive load
1
I
GD
Maximum gate current
90
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
required to trigger
60
mA
Anode Supply = 6V resistive load
35
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
Parameter
P400
Units Conditions
10
Triggering
W
V
0.2
V
T
J
= 125°C, rated V
DRM
applied
2
mA
T
J
= 125°C, rated V
DRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
R
thJC
Max. storage temperature range
-40 to 125
Max. thermal resistance,
1.05
K/W
DC operation per junction
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
0.10
K/W
Mounting surface, smooth and greased
T
Mounting torque, base to heatsink
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
Parameter
P400
Units
Conditions
Thermal and Mechanical Specification
°C
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
相關PDF資料
PDF描述
P404K PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P404W PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P425W PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P405K PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P405KW PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
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