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參數(shù)資料
| 型號(hào)： | P5506HVG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | P5506HVG |
2
AUG-19-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P5506HVG
SOP-8
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
20
A
V
GS
= 4.5V, I
D
= 4A
55
75
Drain-Source
Resistance
1
On-State
R
DS(ON)
V
GS
= 10V, I
D
= 4.5A
42
55
m
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 4.5A
14
S
DYNAMIC
Input Capacitance
C
iss
650
Output Capacitance
C
oss
80
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
rss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
35
pF
Q
g
12.5
18
Q
gs
2.4
Q
gd
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 4.5A
2.6
nC
t
d(on)
11
20
t
r
8
18
t
d(off)
19
35
t
f
V
DD
= 30V
I
D
1A, V
GS
= 10V, R
GEN
= 6
6
15
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
Continuous Current
I
S
1.3
Pulsed Current
3
Forward Voltage
1
I
SM
2.6
A
V
SD
I
F
= I
S
A, V
GS
= 0V
1
V
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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