參數(shù)資料
型號: P89LPC9321FA,529
廠商: NXP Semiconductors
文件頁數(shù): 41/71頁
文件大?。?/td> 0K
描述: IC 80C51 MCU FLASH 8K 28-PLCC
標(biāo)準(zhǔn)包裝: 37
系列: LPC900
核心處理器: 8051
芯體尺寸: 8-位
速度: 18MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 26
程序存儲(chǔ)器容量: 8KB(8K x 8)
程序存儲(chǔ)器類型: 閃存
EEPROM 大?。?/td> 512 x 8
RAM 容量: 768 x 8
電壓 - 電源 (Vcc/Vdd): 2.4 V ~ 3.6 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-PLCC
包裝: 管件
配用: 568-1758-ND - BOARD EVAL FOR LPC93X MCU FAMILY
其它名稱: 935287628529
P89LPC9321
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 16 November 2010
46 of 71
NXP Semiconductors
P89LPC9321
8-bit microcontroller with accelerated two-clock 80C51 core
After the operation finishes, the hardware will set the EEIF bit, which if enabled will
generate an interrupt. The flag is cleared by software.
Remark: When voltage supply is lower than 2.4 V, the BOD FLASH is tripped and Data
EEPROM program or erase is blocked. EWERR1 and EWERR0 bits are used to indicate
the write error for BOD EEPROM. Both can be cleared by power on reset, watchdog reset
or software write.
7.30 Flash program memory
7.30.1 General description
The P89LPC9321 flash memory provides in-circuit electrical erasure and programming.
The flash can be erased, read, and written as bytes. The Sector and Page Erase functions
can erase any flash sector (1 kB) or page (64 bytes). The Chip Erase operation will erase
the entire program memory. ICP using standard commercial programmers is available. In
addition, IAP and byte-erase allows code memory to be used for non-volatile data
storage. On-chip erase and write timing generation contribute to a user-friendly
programming interface. The P89LPC9321 flash reliably stores memory contents even
after 100,000 erase and program cycles. The cell is designed to optimize the erase and
programming mechanisms. The P89LPC9321 uses VDD as the supply voltage to perform
the Program/Erase algorithms. When voltage supply is lower than 2.4 V, the BOD FLASH
is tripped and flash erase/program is blocked.
7.30.2 Features
Programming and erase over the full operating voltage range.
Byte erase allows code memory to be used for data storage.
Read/Programming/Erase using ISP/IAP/ICP.
Internal fixed boot ROM, containing low-level IAP routines available to user code.
Default loader providing ISP via the serial port, located in upper end of user program
memory.
Boot vector allows user-provided flash loader code to reside anywhere in the flash
memory space, providing flexibility to the user.
Any flash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the flash for each sector.
100,000 typical erase/program cycles for each byte.
10 year minimum data retention.
7.30.3 Flash organization
The program memory consists of eight 1 kB sectors on the P89LPC9321 devices. Each
sector can be further divided into 64-byte pages. In addition to sector erase, page erase,
and byte erase, a 64-byte page register is included which allows from 1 to 64 bytes of a
given page to be programmed at the same time, substantially reducing overall
programming time.
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P89LPC9321FDH,512 功能描述:8位微控制器 -MCU 8B MCU 2-CLOCK 80C51 8KB 3V 512B EEPROM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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