參數(shù)資料
型號(hào): P9NB60FP
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET
中文描述: ? - 600V的通道- 0.7ohm - 9A條TO-220/TO220FP PowerMESH MOSFET的
文件頁數(shù): 1/9頁
文件大?。?/td> 108K
代理商: P9NB60FP
STP9NB60
STP9NB60FP
N - CHANNEL 600V - 0.7
- 9A TO-220/TO220FP
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.7
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
January 2000
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP9NB60
STP9NB60FP
600
600
±
30
9.0(*)
5.7(*)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(
*)
Limited only by maximum temperature allowed
V
V
V
A
A
A
W
9.0
5.7
36
125
1.0
4.5
36
40
0.32
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
9A, di/dt
200 A/
μ
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.8
< 0.8
I
D
STP9NB60
STP9NB60FP
600 V
600 V
9.0 A
9.0 A
1/9
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