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參數(shù)資料
| 型號(hào)： | PA28F002BC-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 80 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 34/37頁(yè) |
| 文件大?。?/td> | 455K |
| 代理商： | PA28F002BC-T80 |
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
34
PRELIMINARY
ADDRESSES (A)
WE# (E)
OE# (G)
CE# (W)
DATA (D/Q)
RP# (P)
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
HH
V
V
6.5V
IL
V
IN
D
IN
A
IN
A
AVAV
t
IN
D
Valid
SRD
IN
D
QVPH
t
PHHEH
t
High Z
EHDX
t
V
IL
V
V (V)
1
2
3
4
6
5
EHAX
t
EHQV1,2,3,4
t
EHEL
t
EHWH
t
ELEH
t
t
DVEH
VPEH
t
QVVL
t
PHWL
t
WLEL
t
AVEH
t
PPLK
V
PPH
V
1
2
PPH
V
IL
V
IH
V
IL
V
IH
WP#
0578_13
NOTES:
1.
2.
3.
4.
5.
6.
V
CC
Power-Up and Standby
Write Program Setup or Erase Setup Command
Write Valid Address and Data (Program or Erase Confirm Command
Automated Program or Erase Delay
Read Status Register Data
Write Read Array Command
Figure 14. Alternate AC Waveforms for Write and Erase Operations (CE#
—Controlled Writes)
Table 11. Erase and Program Timings (T
A
= +25°C)
V
PP
= 12V ± 10%
2
V
PP
= 12V ± 5%
Parameter
1
V
CC
= 5V ± 10%
V
CC
= 5V ± 10%
Units
Typ
Max
Typ
Max
Boot/Parameter Block Erase Time
5.8
40
1.0
7
s
Main Block Erase Time
14
60
2.4
14
s
Main Block Write Time
6.0
20
1.2
4.2
s
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Erase times near max limits when the 10% V
PP
option is used.
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