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參數(shù)資料
| 型號(hào)： | PBSS5140S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KPT 15C 14#20 1#16 SKT PLUG |
| 中文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | PBSS5140S |
2001 Nov 15
2
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140S
FEATURES
High power dissipation (830 mW)
Ultra low collector-emitter saturation voltage
1 A continuous current
High current switching
Improved device reliability due to reduced heat
generation.
APPLICATIONS
Medium power switching and muting
Linear regulators
DC/DC converter
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT54 plastic package.
NPN complement: PBSS4140S.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS5140S
S5140S
SYMBOL
PARAMETER
MAX.
40
1
2
<500
UNIT
V
CEO
I
C
I
CM
R
CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
V
A
A
m
PIN
DESCRIPTION
1
2
3
base
collector
emitter
handbook, halfpage
1
3
2
MAM460
2
1
3
Fig.1 Simplified outline (SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
40
40
5
1
2
1
830
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
A
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS5140S,126 | 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS5140T | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23 |
| PBSS5140T T/R | 功能描述:兩極晶體管 - BJT PNP 40V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS5140T,215 | 功能描述:兩極晶體管 - BJT PNP 40V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS5140T215 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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