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參數資料
| 型號： | PBYR30100PT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | KVM EXTDR, DUAL ACCESS AND BUILT IN SKEW COMP |
| 中文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | PBYR30100PT |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR30100PT series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
per diode; I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
20
PBYR30100PT
IF(AV) / A
PF / W
Vo = 0.550 V
Rs = 0.010 Ohms
20
15
10
5
0
Tmb(max) / C
150
26
143
136
129
122
10
D = 1.0
0.5
0.2
0.1
D =
t
p
t
p
T
T
I
t
10
30
50
VR/ V
70
90
100
10
1
0.1
0.01
IR/ mA
PBYR30100PT
20
40
60
80
100
Tj/ C = 150
125
100
75
50
0
10
PBYR30100
IF(AV) / A
PF / W
15
10
5
0
a = 1.57
1.9
2.2
2.8
4
Vo = 0.550 V
Rs = 0.010 Ohms
5
15
150
143
136
129
Tmb(max) / C
1
10
100
10000
1000
100
10
Cd/ pF
VR/ V
PBYR30100PT
0
1
2
PBYR30100PT
VF / V
IF / A
100
80
60
40
20
0
0.5
1.5
Tj = 25 C
Tj = 125 C
Typ
Max
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
t
p
t
D
October 1994
3
Rev 1.100
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