For most applications, P
參數(shù)資料
型號： PC9S08QE128CLH
廠商： Freescale Semiconductor
文件頁數(shù)： 6/50頁
文件大?。?/td> 0K
描述： MCU 8BIT 128K FLASH 64-LQFP
標準包裝： 160
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 50MHz
連通性： I²C，LIN，SCI，SPI
外圍設備： LVD，PWM，WDT
輸入/輸出數(shù)： 54
程序存儲器容量： 128KB（128K x 8）
程序存儲器類型： 閃存
RAM 容量： 8K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 22x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-LQFP
包裝： 托盤
MC9S08QE128 Series Data Sheet, Rev. 7
Electrical Characteristics
Freescale Semiconductor
14
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
– 2.5
V
Maximum input voltage limit
7.5
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
± 2000
—
V
2
Machine model (MM)
VMM
± 200
—
V
3
Charge device model (CDM)
VCDM
± 500
—
V
4
Latch-up current at TA = 85°CILAT
± 100
—
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC9S08QE128CLK 功能描述:8位微控制器 -MCU 8-bit FlexisQE 128K (pre-qual sample) RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PC9S08QE32CFT 制造商:Freescale Semiconductor 功能描述:9S08QE32-C&I-48QFN - Bulk
PC9S08QE32CLD 制造商:Freescale Semiconductor 功能描述:8 BIT, 32K FLASH - Trays
PC9S08QE32CQC 制造商:Freescale Semiconductor 功能描述:9S08QE32-C&I-32LQFP - Bulk
PC9S08QE32CQD 制造商:Freescale Semiconductor 功能描述:9S08QE32-C&I-44LQFP - Bulk
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