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參數(shù)資料
| 型號(hào)： | PCB2421T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PROM |
| 英文描述： | 1K dual mode serial EEPROM |
| 中文描述： | 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封裝： | 3.90 MM, PLASTIC, MS-012AA, SOT-96-1, SOP-8 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 112K |
| 代理商： | PCB2421T |
1997 Apr 01
13
Philips Semiconductors
Preliminary specification
1K dual mode serial EEPROM
PCB2421
7
In accordance with the Absolute Maximum Rating System (IEC 134).
LIMITING VALUES
Note
1.
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
8
V
DD
= 4.5 to 5.5 V; V
SS
= 0 V; T
amb
= 0 to +70
°
C; unless otherwise specified.
DC CHARACTERISTICS
9
V
DD
= 4.5 to 5.5 V; V
SS
= 0 V; T
amb
= 0 to +70
°
C; unless otherwise specified.
EEPROM CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.3
0.5
10
10
65
65
0
2000
MAX.
UNIT
V
DD
V
n
I
I
I
O
P
tot
P
o
T
stg
supply voltage
input voltage on any pin
DC input current
DC output current
total power dissipation
power dissipation per output
storage temperature
+7.0
V
DD(max)
+ 0.5
+10
+10
150
50
+150
+70
+70
+2000
V
V
mA
mA
mW
mW
°
C
°
C
°
C
V
measured via 500
resistor
without EEPROM retention
with EEPROM retention
T
amb
V
es
operating ambient temperature
electrostatic discharge
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DD
V
IH
supply voltage
HIGH level input voltage (pins 3,
5 and 6)
LOW level input voltage (pins 3,
5 and 6)
HIGH level input voltage (pin 7)
LOW level input voltage (pin 7)
LOW level output voltage
input leakage current
output leakage current
operating write current
operating read current
standby current
4.5
0.7V
DD
5.5
V
V
V
IL
0.3V
DD
V
V
IH(7)
V
IL(7)
V
OL
I
LI
I
LO
I
DD(write)
I
DD(read)
I
DD(st)
2.0
10
10
0.8
0.4
+10
+10
1000
400
30
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
I
OL
= 3 mA; V
DD
= 4.5 V
V
I
= 0 to 5.5 V
V
O
= 0 to 5.5 V
f
SCL
= 100 kHz; V
DD
= 5.5 V
f
SCL
= 100 kHz; V
DD
= 5.5 V
V
DD
= 5.5 V; DDC2B mode;
VCLK = SDA = SCL = V
DD
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
t
WR
N
CYC
t
RET
EEPROM write time
EEPROM endurance
EEPROM retention
10000
10
20
ms
E/W cycles
years
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