參數(shù)資料
型號(hào): PCD8582D-2
廠商: NXP Semiconductors N.V.
英文描述: 256 x 8-bit CMOS EEPROMS with I2C-bus interface
中文描述: 256 × 8位CMOS EEPROM產(chǎn)品具有I2C總線接口
文件頁(yè)數(shù): 2/20頁(yè)
文件大小: 153K
代理商: PCD8582D-2
December 1994
2
Philips Semiconductors
Product specification
256 x 8-bit CMOS EEPROMS
with I
2
C-bus interface
PCX8582X-2 Family
FEATURES
Low power CMOS
– maximum active current 2.0 mA
– maximum standby current 10
μ
A (at 6.0 V),
typical 4
μ
A
Non-volatile storage of 2-Kbits organized as 256
×
8-bits
Single supply with full operation down to 2.5 V
On-chip voltage multiplier
Serial input/output I
2
C-bus
Write operations
– byte write mode
– 8-byte page write mode
(minimizes total write time per byte)
Read operations
– sequential read
– random read
Internal timer for writing (no external components)
Power-on reset
High reliability by using a redundant storage code
Endurance
– >500 k E/W-cycles at T
amb
= 22
°
C
40 years non-volatile data retention time (typ.)
Pin and address compatible to
– PCX8570, PCF8571, PCF8572 and PCF8581
– PCX8494X-2, PCX8598X-2 -Family.
DESCRIPTION
The PCX8582X-2 is a 2-Kbit (256
×
8-bit) floating gate
electrically erasable programmable read only memory
(EEPROM). By using an internal redundant storage code
it is fault tolerant to single bit errors. This feature
dramatically increases reliability compared to conventional
EEPROM memories.
Power consumption is low due to the full CMOS
technology used. The programming voltage is generated
on-chip, using a voltage multiplier.
As data bytes are received and transmitted via the serial
I
2
C-bus, a package using eight pins is sufficient. Up to
eight PCX8582X-2 devices may be connected to the
I
2
C-bus. Chip select is accomplished by three address
inputs (A0, A1, A2).
Timing of the ERASE/WRITE cycle is carried out
internally, thus no external components are required. Pin 7
(PTC) must be connected to either V
DD
or left open-circuit.
There is an option of using an external clock for timing the
length of an ERASE/WRITE cycle.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
I
DDR
supply voltage
supply current READ
2.5
6.0
V
f
SCL
= 100 kHz
V
DD
= 3 V
V
DD
= 6 V
f
SCL
= 100 kHz
V
DD
= 3 V
V
DD
= 6 V
V
DD
= 3 V
V
DD
= 6 V
60
200
μ
A
μ
A
I
DDW
supply current ERASE/WRITE
0.6
2.0
3.5
10
mA
mA
μ
A
μ
A
I
DDSB
supply current STANDBY
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