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參數(shù)資料
| 型號： | PD839C4 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | InGaAs AVALANCHE PHOTO DIODES |
| 中文描述： | 銦鎵砷雪崩光電二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | PD839C4 |
MITSUBISHI PHOTO DIODES
PD839C4
InGaAs AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION
Feature
PD839C4 is a
f
35
m
m InGaAs Avalanche
Photodiodes (APD) with Trans Impedance
Amplifier(TIA).
This APD with TIA features a high-speed response and
low noise, and is suitable for 2.5Gb/s optical
communication systems.
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Note 1)
Symbol
Parameter
Vpd
APD supply voltage
Vcc
TIA supply voltage
Pin
Photo input power
Ipd
APD reverse current
Tstg
Storage temperature
Note 1: The maximum rating and limitation over which the device should not be operated instant
time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer
to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS
Conditions
-
-
-
-
-
Ratings
VBR
6
0.5
0.5
-40 ~ +85
Unit
V
V
mW
mA
C
Limits
Typ.
3.3
-
Symbol
Parameter
Test conditions
Min.
3.0
-20
Max.
5.5
+85
Unit
Vcc
Tc
TIA supply voltage
Case temperature
-
-
V
C
ELECTRICAL / OPTICAL CHARACTERISTICS
(Tc=25 C, Vcc=3.3V,
l
=1550nm)
Limits
Typ
60
15
35
2.0
Symbol
Parameter
Test conditions
Min
40
9.5
-
1.5
Max
80
-
70
-
Unit
VBR
R
Icc
fc
Break down voltage
Responsivity
TIA consumption current
Cut-off frequency
Averaged equivalent input
noise current density
Minimum
sensitivity
Id=100
mA
M=10, R
L
=50
W
,
Single-ended
Pin=0
m
W
RL=50
W
, -3dB, M=10
Pin=0
m
W, f=10MHz-1.4GHz,
RL=50
W
NRZ, PBS=2
23
-1, BER=10
-10
,
2.488G/s, at optimum M
V
kV/W
mA
GHz
in
-
9.0
-
pA/ Hz
1/2
Pr
received
-
-33
-
dBm
MITSUBISHI ELECTRIC ( 1 / 2 )
As of July ‘02
Buit in TIA
Single 3.3V supply voltage for TIA
Differential output
Ball lens cap
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