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參數(shù)資料
| 型號(hào)： | PDTC115EK |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | PLASTIC, SC-59A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | PDTC115EK |
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2004 Aug 06
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 100 k
, R2 = 100 k
PDTC115E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT416
SOT490
SOT346
SOT883
PDTC115ES
PDTC115ET
PDTC115EU
SOT54
SOT23
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
SOT490
storage temperature
junction temperature
operating ambient
temperature
open emitter
open base
open collector
50
50
10
V
V
V
+40
10
20
100
V
V
mA
mA
I
O
I
CM
P
tot
T
amb
≤
25
°
C
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
65
65
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTC115EEF | NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm |
| PDTC115E | NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm |
| PDTC115ES | NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm |
| PDTC124XEF | NPN resistor-equipped transistor |
| PDTC144WK | NPN resistor-equipped transistors; R1 = 47 KOHM, R2 = 22 KOHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC115EK,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC115EM | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTC115EM T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC115EM,315 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC115EM315 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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