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參數(shù)資料
| 型號(hào)： | PDTC144TEF |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-490 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|的SOT - 490 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 50K |
| 代理商： | PDTC144TEF |
2002 Mar 14
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 22 k
, R2 = 22 k
PDTC124EEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
For mounting conditions, see “Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”
THERMAL CHARACTERISTICS
Note
1.
For mounting conditions, see “Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
i
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
50
10
V
V
V
65
65
+40
10
100
100
250
+150
150
+150
V
V
mA
mA
mW
°
C
°
C
°
C
I
O
I
CM
P
tot
T
stg
T
j
T
amb
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
2.5
15.4
0.8
TYP.
1.1
1.7
22
1
MAX.
UNIT
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off current
V
CB
= 50 V; I
E
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
μ
A
V
CE
= 0.3 V; I
C
= 5 mA
100
1
50
180
150
0.8
28.6
1.2
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input off voltage
input on voltage
input resistor
resistor ratio
mV
V
V
k
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V;
f = 1 MHz
2.5
pF
R1
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