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參數(shù)資料
| 型號(hào)： | PE84244-01 |
| 廠商： | PEREGRINE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 開(kāi)關(guān) |
| 英文描述： | SPDT MOSFET RF SWITCH |
| 中文描述： | 0 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.95 dB INSERTION LOSS |
| 封裝： | ULTRA THIN, MSOP-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | PE84244-01 |
PE84244
Preliminary Specification
Copyright
Peregrine Semiconductor Corp. 2003
File No. 70/0129~00A
| UTSi CMOS RFIC SOLUTIONS
Page 2 of 7
Figure 3. Pin Configuration
Table 2. Pin Descriptions
Pin No.
Pin
Name
Description
1
VDD
Nominal 3 V supply connection. A
bypass capacitor (100 pF) to the ground
plane should be placed as close as
possible to the pin
2
CTRL
CMOS logic level:
High = RFCommon to RF1 signal path
Low = RFCommon to RF2 signal path
3
GND
Ground connection. Traces should be
physically short and connected to ground
plane for best performance.
4
RF
Common
Common RF port for switch (Note 1)
5
RF2
RF2 port (Note 1)
6
GND
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
7
GND
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
8
RF1
RF1 port (Note 1)
Note 1: All RF pins must be DC blocked with an external
series capacitor or held at 0VDC.
Table 3. Absolute Maximum Ratings
Symbol
Parameter/Conditions
Min
Max
Units
VDD
Power supply voltage
-0.3
4.0
V
VI
Voltage on any input
-0.3
VDD+
0.3
V
TST
Storage temperature range
-65
150
°C
TOP
Operating temperature
range
-55
125
°C
PIN
Input power (50)
30
dBm
VESD
ESD voltage (Human Body
Model)
1500
V
Table 4. DC Electrical Specifications
Parameter
Min
Typ
Max
Units
VDD Power Supply Voltage
2.7
3.0
3.3
V
IDD Power Supply Current
VDD = 3V, VCNTL = 3V
250
500
nA
Control Voltage High
0.7xVDD
V
Control Voltage Low
0.3xVDD
V
Table 5. Control Logic Truth Table
Control Voltage
Signal Path
CTRL = CMOS High
RFCommon to RF1
CTRL = CMOS Low
RFCommon to RF2
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
PE84244
1
2
3
4
8
7
6
5
CTRL
RFCommon
GND
RF1
GND
VDD
GND
RF2
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