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參數(shù)資料
| 型號(hào)： | PEB2023 |
| 廠商： | SIEMENS AG |
| 英文描述： | ISDN DC Converter Circuit IDCC |
| 中文描述： | 綜合業(yè)務(wù)數(shù)字網(wǎng)DC轉(zhuǎn)換器電路IDCC |
| 文件頁(yè)數(shù)： | 12/25頁(yè) |
| 文件大小： | 145K |
| 代理商： | PEB2023 |
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PEB 2023
PEF 2023
Overview
Semiconductor Group
12
08.97
Figure 5
shows the PEB/F 2023 in a non-isolated minimum configuration by using
supply voltage range 1 (for this input voltages also supply voltage range 2 is possible).
The voltage drop over R
6
is the difference between input voltage and undervoltage
detection level. To get low power dissipation the value of resistor R
6
should be as high as
possibile. The minimum current through R
6
is about 100nA, the maximum current is 1mA
(see absolute maximum ratings).
Figure 5
PEB/F 2023 in a non-isolated Minimum Configuration
Figure 6
shows the PEB/F 2023 in a non-isolated flyback configuration with transformer
using supply voltage range 0. The voltage drop over R
6
is V
EXT
-1V. To get low power
dissipation the value of resistor R
6
, should be as high as possibile. For calculating the
value of resistor R
6
the minimum current through R
6
is about 100nA and the maximum
current is about 100
μ
A.
25 ... 38 V
PEB 2023
PEF 2023
V
REF
9
1
2
3
4
GA
5
V
EXT
6
C
SS
7
V
S
GND
13
11
UV
12
UVx
8
10
VSYNC
P
RC
14
COMP
V
N
I
P
+
0 V
+
+
0 V
BAS 78B
BSS 296
+
+ 42 V
+
10mH
R
Load
330/1%
1Μ/10%
R
6
0.47μF
20%
C
5
2.2μF
20%
C
7
0.22/5%
R
5
T
1
L
1
D
1
C
6
100μF
20%
C
1
68pF
5%
R
1
27Κ
5%
1μF
20%
C
3
10Κ/5%
470nF
10%
R
2
C
2
220μF
20%
C
4
16Κ/1%
150Κ
1%
R
3
R
4
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