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參數(shù)資料
| 型號(hào)： | PESDXU1UT |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Ultra low capacitance ESD protection diode in SOT23 package |
| 中文描述： | 超低電容ESD保護(hù)二極管；SOT23封裝 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 104K |
| 代理商： | PESDXU1UT |
9397 750 14912
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2005
5 of 13
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6.
Characteristics
[1]
Non-repetitive current pulse 8/20
μ
s exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 2
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
RWM
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
I
RM
reverse leakage current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
V
BR
breakdown voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
diode capacitance
V
CL
clamping voltage
PESD3V3U1UT
Characteristics
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
-
-
-
-
-
0.25
0.03
< 1
< 1
< 1
2
1
50
50
50
μ
A
μ
A
nA
nA
nA
[2]
5.8
7.0
14.2
17.1
25.4
6.4
7.6
15.0
18.9
27.8
0.6
6.9
8.2
16.7
20.3
30.3
1.5
V
V
V
V
V
pF
f = 1 MHz; V
R
= 0 V
[2]
-
[1] [2]
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 1 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9
20
12
21
23
39
28
53
40
76
V
V
V
V
V
V
V
V
V
V
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
r
dif
differential resistance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
-
-
-
-
-
-
-
-
-
-
400
80
200
225
300
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