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參數(shù)資料
| 型號(hào)： | PH1090-550S |
| 英文描述： | Avionics Pulsed Power Transistor - 550 Watts,1030-1090 MHz, 10us Pulse, 1% Duty |
| 中文描述： | 航空電子脈沖功率晶體管- 550瓦,1030 - 1090兆赫，10us檔脈沖，1％稅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | PH1090-550S |
Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10
μ
s Pulse, 1 % Duty
PH1090-550S
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
Designed for Short Pulse IFF Applications
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
Symbol
Parameter
BV
CES
Collector-Emitter Breakdown
I
CES
Collector-Emitter Leakage
R
TH(JC)
Thermal Resistance
P
in
Input Power
G
P
Power Gain
η
Collector Efficiency
R
L
Input Return Loss
VSWR-T
Load Mismatch Tolerance
VSWR-S
Load Mismatch Stability
Avionics Pulsed Power Transistor - 550 Watts,
1030-1090 MHz, 10
μ
s Pulse, 1% Duty
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
Rating
80
3.0
28
1800
Units
V
V
A
W
T
stg
T
j
-65 to +200
200
°C
°C
Broadband Test Fixture Impedance
F (MHz)
1030
1090
Z
IF
(
)
4.0 - j3.5
3.6 - j2.7
Z
OF
(
)
1.4 - j1.6
1.1 - j1.9
Test Conditions
Min
80
-
-
-
7.5
55
9
-
-
Max
-
25
0.05
100
-
-
-
10:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
I
C
=250mA
V
CE
=45 V
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
V
CC
=50 V, P
out
=550 W, f=1090 MHz
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM’s PH1090-550S is a silicon bipolar NPN transistor
intended for use in L-band, 1.2 - 1.4 GHz avionics equipment
such as IFF, mode-S and TCAS systems. Designed for
common-base, class C broadband pulsed power applications, the
PH1090-550S delivers 7.5 dB of gain at 550 watts of output
power when operating with short pulse length (10μS), at 1
percent duty cycle. The transistor is housed in a 2-lead, rectan-
gular metal-ceramic flange package, with internal input and
output impedance matching networks. Diffused emitter ballast
resistors and gold metalization assure ruggedness and long-term
reliability.
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