參數(shù)資料
型號(hào): PHB101NQ04T
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel TrenchMOS standard level FET
中文描述: 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 4/13頁(yè)
文件大?。?/td> 94K
代理商: PHB101NQ04T
Philips Semiconductors
PHP/PHB101NQ04T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 12 May 2004
4 of 13
9397 750 13167
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Thermal characteristics
5.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
R
th(j-a)
thermal resistance from junction to ambient
SOT78
SOT404
Thermal characteristics
Conditions
Min
-
Typ
-
Max
0.95
Unit
K/W
vertical in still air
mounted on a printed-circuit
board; vertical in still air;
minimum footprint.
-
-
60
50
-
-
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03aq91
10-2
10-1
1
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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