參數(shù)資料
型號(hào): PHB73N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 6/14頁(yè)
文件大?。?/td> 264K
代理商: PHB73N06T
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
6 of 14
9397 750 08107
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 6.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
VGS (V) =
10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
20.0
15.0
10
8
6
4
2
0
VDS (V)
200
180
160
140
120
100
80
60
40
20
0
ID
(A)
003aaa086
003aaa087
ID
(A)
VGS (V)
10
6
4
2
0
8
0
10
20
30
40
50
60
70
80
90
100
25 oC
Tj = 175 oC
VGS = 5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
8.0 V
10 V
003aaa088
RDSon
(m
)
18
16
14
12
10
20
22
24
26
30
28
10
20
30
15
25
5
35
40
45
50
ID (A)
0
-40
-80
40
80
120
160
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj (oC)
a
003aaa076
a
R
DSon 25 C
)
---------------------------
=
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