參數(shù)資料
型號: PHB83N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 75 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/15頁
文件大?。?/td> 308K
代理商: PHB83N03LT
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 23 January 2001
4 of 15
9397 750 07815
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Figure 4
Value
1.3
Unit
K/W
vertical in still air; SOT78 package
vertical in still air; SOT226 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT226 packages
60
65
50
K/W
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ad85
10-3
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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