參數(shù)資料
型號(hào): PHF9NQ20T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220, FPAK-3
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 113K
代理商: PHF9NQ20T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX9NQ20T , PHF9NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
8.7
A
-
-
35
A
I
F
= 9 A; V
GS
= 0 V
I
F
= 9 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 25 V
-
-
-
0.85
92
0.5
1.2
-
-
V
ns
μ
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186A package; f = 50-60 Hz;
sinusoidal waveform; R.H.
65%;
clean and dustfree
SOT186 package; R.H.
65%;
clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
1500
V
f = 1 MHz
-
10
-
pF
November 2000
3
Rev 1.100
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