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參數(shù)資料
| 型號： | PHN103S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 25V的五（巴西）直| 6A條（丁）|蘇 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHN103S |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor & schottky diode
PHN103S
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
F
Continuous forward current
I
FRM
Repetitive peak forward current
I
R
Reverse leakage current
CONDITIONS
T
a
= 25 C
MIN.
-
-
-
-
-
-
-
TYP.
-
-
0.2
5
0.4
0.3
120
MAX.
3
23
1.0
10
0.6
0.55
-
UNIT
A
A
mA
mA
V
V
pF
V
R
= 25 V
T
j
= 100C
V
F
Forward voltage
I
F
= 2.5 A; V
GS
= 0 V
I
F
= 2.5 A; V
= 0 V, T
= 100 C
V
= 5 V, f = 1MHz, T
j
= 25C to
150C
C
d
Junction capacitance
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
a
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
a
); conditions: V
GS
≥
4.5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance; MOSFET.
Z
th j-a
= f(t); parameter D = t
p
/T
Normalised Power Derating, Ptot (%)
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
Ambient temperature, Ta (C)
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
10 s
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
Normalised Current Derating, ID (%)
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
Ambient temperature, Ta (C)
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
September 1999
3
Rev 1.000
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