參數(shù)資料
型號： PHP125N06LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 1/9頁
文件大?。?/td> 71K
代理商： PHP125N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP125N06LT, PHB125N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Very low on-state resistance
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
I
D
= 75 A
R
DS(ON)
≤
8 m
(V
GS
= 5 V)
R
DS(ON)
≤
7 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Thedevice has very low on-state resistance. Itis intended for use in dcto dc converters and general purpose switching
applications.
The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB125N06LT is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
13
75
75
240
250
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
March 1998
1
Rev 1.400
相關PDF資料
PDF描述
PHP125N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管)
PHP125 P-channel enhancement mode MOS transistor(P溝道增強型MOS晶體管)
PHP130N03T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管)
PHP13N40E PowerMOS transistors Avalanche energy rated
PHB13N40E PowerMOS transistors Avalanche energy rated
相關代理商/技術參數(shù)
參數(shù)描述
PHP125N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
PHP125T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.3A I(D) | SO
PHP12-7,50 功能描述:可插拔接線端子 PCBHdr Horiz 7.5mm RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Plugs 系列:PTS 端接類型:Spring Cage 位置/觸點數(shù)量:5 線規(guī)量程:26-14 節(jié)距:5 mm 電流額定值:10 A 電壓額定值:250 V 安裝風格: 安裝角: 觸點電鍍:
PHP129NQ04LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHP129NQ04LT,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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