- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367941 > PHP206 (NXP SEMICONDUCTORS) Dual P-channel enhancement mode MOS transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PHP206 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-channel enhancement mode MOS transistor |
| 中文描述： | 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SOT96-1, SO-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 54K |
| 代理商： | PHP206 |
1998 Feb 05
3
Philips Semiconductors
Objective specification
Dual P-channel enhancement mode
MOS transistor
PHP206
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 Watt at the same time.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an R
th a-tp
(ambient to tie-point) of 90 K/W.
5.
6.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per P-channel
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
30
±
20
5.6
22.5
3.5
2.63
1.14
1.56
+150
+150
V
V
A
A
W
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C; note 3
T
amb
= 25
°
C; note 4
T
amb
= 25
°
C; note 5
T
amb
= 25
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
2.7
10.8
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP33N10 | PowerMOS transistor(功率MOS晶體管) |
| PHP34NQ11T | N-channel TrenchMOS⑩ standard level FET |
| PHP37N06LT | TrenchMOS transistor Logic level FET |
| PHP37N06 | TrenchMOS transistor Logic level FET |
| PHB37N06LT | TrenchMOS transistor Logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP208 | 制造商:ProTek Devices 功能描述:Diode TVS Single Bi-Dir 295V 15KW 2-Pin 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 295V 15KW 2PIN CASE 11 - Bulk |
| PHP20N06 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP20N06E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP20N06T | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP20N06T,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。
