參數(shù)資料
型號(hào): PHP222NQ04LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOSTM logic level FET
中文描述: 75 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 6/13頁(yè)
文件大?。?/td> 93K
代理商: PHP222NQ04LT
Philips Semiconductors
PHP/PHB222NQ04LT
N-channel TrenchMOS logic level FET
Product data
Rev. 01 — 13 May 2004
6 of 13
9397 750 13156
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and
175
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aq31
0
80
160
240
0
0.5
1
1.5
2
VDS (V)
ID
(A)
Tj = 25
°
C
VGS = 2.4 V
10 V
2.8 V
4 V
3.6 V
3.2 V
5 V
3.4 V
03aq33
0
20
40
60
80
0
1
2
3
4
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175
°
C
25
°
C
03aq32
0
2
4
6
8
10
0
80
160
240
ID (A)
RDSon
(m
)
VGS = 3.4 V
Tj = 25
°
C
10 V
5 V
4 V
3.6 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
T
j
(
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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