參數(shù)資料
型號(hào): PHP36N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 43.4 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 10/13頁(yè)
文件大?。?/td> 89K
代理商: PHP36N03LT
PHD_PHP36N03LT_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2006
10 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
Fig 16. Package outline SOT78 (3-lead TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT78
SC-46
3-lead TO-220AB
D
D1
q
p
L
1
2
3
L1
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
D
c
L2
max.
3.0
3.8
3.5
15.0
12.8
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
16.0
15.2
0.9
0.6
1.45
1.00
4.7
4.1
1.40
1.25
6.6
5.9
10.3
9.7
L1
E
L
05-03-22
05-10-25
mounting
base
相關(guān)PDF資料
PDF描述
PHD5N20E PowerMOS transistor
PHD83N03LT N-channel enhancement mode field-effect transistor
PHI214-20EL Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP36N03LT,127 功能描述:MOSFET Trans MOSFET N-CH 30V 43.4A 3-Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP36N06E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHP37N06 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHP37N06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHP37N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET