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參數(shù)資料
| 型號(hào)： | PHP69N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管) |
| 中文描述： | 69 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | PHP69N03T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP69N03T
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 30 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 10 V; I
D
= 25 A
-
-
12
-
14
26
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 69 A; V
DD
= 24 V; V
GS
= 10 V
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
38
7
21
1500
480
220
22
30
40
25
3.5
MAX.
-
-
-
-
2000
550
300
35
60
50
38
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 25 V; I
D
= 25 A;
V
= 10 V; R
G
= 5
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
September 1997
2
Rev 1.100
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PDF描述 |
|---|---|
| PHP69NLT | TrenchMOS transistor Logic level FET |
| PHP6N10E | PowerMOS transistor |
| PHP6N50E | PowerMOS transistors Avalanche energy rated |
| PHB6N50E | PowerMOS transistors Avalanche energy rated |
| PHP6N60E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP69NLT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TrenchMOS transistor Logic level FET |
| PHP6N10E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP6N28T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 5.5A I(D) | TO-220AB |
| PHP6N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP6N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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