9397 750 14735
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 13 April 2005
4 of 12
Philips Semiconductors
PHP75NQ08T
N-channel TrenchMOS standard level FET
5.
Thermal characteristics
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Min
-
-
Typ
-
60
Max
0.95
-
Unit
K/W
K/W
vertical in free air
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaa911
10
-2
10
-1
1
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
T
P
t
t
p
T
δ
=
