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參數(shù)資料
| 型號： | PHP8ND50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors FREDFET, Avalanche energy rated |
| 中文描述： | 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | PHP8ND50E |
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP8ND50E, PHB8ND50E, PHW8ND50E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
Fast reverse recovery diode
V
DSS
= 500 V
I
D
= 8.5 A
R
DS(ON)
≤
0.85
t
rr
= 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a
F
ast
R
ecovery
E
pitaxial
D
iode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP8ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW8ND50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB8ND50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT429 (TO247)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
2
3
1
1
It is not possible to make connection to pin 2 of the SOT404 package.
August 1998
1
Rev 1.100
相關(guān)PDF資料 |
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|---|---|
| PHW8ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB8ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
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| PHB98N03LT | N-channel enhancement mode field-effect transistor |
| PHD98N03LT | N-channel enhancement mode field-effect transistor |
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| PHP96NQ03LT,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP98N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
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