參數(shù)資料
型號： PHW13N40E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 13.7 A, 400 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/10頁
文件大?。?/td> 104K
代理商： PHW13N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP13N40E, PHB13N40E, PHW13N40E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 13.6 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
≤
50 V; R
GS
= 50
; V
GS
= 10 V
MIN.
-
MAX.
705
UNIT
mJ
E
AR
Repetitive avalanche energy
2
I
= 13.7 A; t
= 2.5
μ
s; T
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V
Repetitive and non-repetitive
avalanche current
-
18
mJ
I
AS
, I
AR
-
13.7
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.8
K/W
SOT78 package, in free air
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
-
60
45
50
-
-
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 400 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
400
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 6.5 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 6.5 A
-
0.26
3.0
7.5
1
50
10
79
7.2
43
16
40
100
42
3.5
4.5
0.35
4.0
-
25
500
200
100
12
55
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
4
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 13 A; V
DD
= 320 V; V
GS
= 10 V
V
DD
= 200 V; R
D
= 15
;
R
G
= 5.6
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1283
218
120
-
-
-
pF
pF
pF
2
pulse width and repetition rate limited by T
j
max.
December 1998
2
Rev 1.000
相關PDF資料
PDF描述
PHP176NQ04T N-channel TrenchMOS-TM standard level FET
PHP1N60E PowerMOS transistor
PHP206 Dual P-channel enhancement mode MOS transistor
PHP33N10 PowerMOS transistor(功率MOS晶體管)
PHP34NQ11T N-channel TrenchMOS⑩ standard level FET
相關代理商/技術參數(shù)
參數(shù)描述
PHW14N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHW201610 功能描述:罩類、盒類及殼類產(chǎn)品 24X12X10 FRP TYP 4X RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
PHW201612 功能描述:罩類、盒類及殼類產(chǎn)品 24X24X10 FRP TYP 4X RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
PHW20166 功能描述:罩類、盒類及殼類產(chǎn)品 24X20X8 FRP TYPE 4X RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
PHW20168 功能描述:罩類、盒類及殼類產(chǎn)品 30X20X8 FRP TYPE 4X RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*