參數(shù)資料
型號： PHW35NQ20T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor(N溝道 TrenchMOS晶體管)
中文描述： 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/7頁
文件大小： 93K
代理商： PHW35NQ20T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHW35NQ20T
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
0.6
UNIT
K/W
in free air
45
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
200
178
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3.0
4.0
-
-
-
6
60
70
-
203
2
100
0.05
10
-
500
77
-
16
-
28
-
22
-
100
-
80
-
90
-
3.5
-
4.5
-
7.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
10 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
V
GS
= 10 V; I
D
= 17 A
V
GS
= 10 V; I
= 17 A; T
j
= 175C
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
I
GSS
I
DSS
V
DS
= 200 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
I
D
= 35 A; V
DD
= 160 V; V
GS
= 10 V
V
DD
= 100 V; R
= 2.7
;
V
= 10 V; R
G
= 5.6
Resistive load
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
4570
370
160
-
-
-
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
35
A
-
-
140
A
I
F
= 35 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
0.85
160
1.0
1.2
-
-
V
ns
μ
C
August 1999
2
Rev 1.000
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